Raman spectroscopy polarization dependence analysis in two-dimensional gallium sulfide

Citation:

R. S. Alencar, R. Longuinhos, C. Rabelo, H. Miranda, B. C. Viana, A. G. Souza Filho, L. G. Canıfmmode \mboxç\else ç\fiado, A. Jorio, and J. Ribeiro-Soares. 2020. “Raman spectroscopy polarization dependence analysis in two-dimensional gallium sulfide.” Phys. Rev. B, 102, Pp. 165307.

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Andreij C Gadelha, Douglas AA Ohlberg, Cassiano Rabelo, Eliel GS Neto, Thiago L Vasconcelos, João L Campos, Jessica S Lemos, Vin{\'ıcius Ornelas, Daniel Miranda, Rafael Nadas, and others. 2021. “Localization of lattice dynamics in low-angle twisted bilayer graphene.” Nature, 590, 7846, Pp. 405–409.

Luiz G Pimenta Martins, David A Ruiz-Tijerina, Connor A Occhialini, Ji-Hoon Park, Qian Song, Ang-Yu Lu, Pedro Venezuela, Luiz G Cançado, Mário SC Mazzoni, Matheus JS Matos, and others. 2023. “Pressure tuning of minibands in MoS2/WSe2 heterostructures revealed by moiré phonons.” Nature Nanotechnology, Pp. 1–7.

Luiz G. Pimenta Martins, Riccardo Comin, Matheus J. S. Matos, Mário S. C. Mazzoni, Bernardo R. A. Neves, and Matthew Yankowitz. 2023. “High-pressure studies of atomically thin van der Waals materials.” Applied Physics Reviews, 10, 1, Pp. 011313. Publisher's Version

Leonel M. Meireles, Eliel G. S. Neto, Gustavo A. Ferrari, Paulo A. A. Neves, Andreij C. Gadelha, Ive Silvestre, Takashi Taniguchi, Kenji Watanabe, Helio Chacham, Bernardo R. A. Neves, Leonardo C. Campos, and Rodrigo G. Lacerda. 2020. “Graphene Electromechanical Water Sensor: The Wetristor.” Advanced Electronic Materials, 6, 2, Pp. 1901167. Publisher's Version Abstract

Abstract A water-induced electromechanical response in suspended graphene atop a microfluidic channel is reported. The graphene membrane resistivity rapidly decreases to ≈25% upon water injection into the channel, defining a sensitive “channel wetting” device—a wetristor. The physical mechanism of the wetristor operation is investigated using two graphene membrane geometries, either uncovered or covered by an inert and rigid lid (hexagonal boron nitride multilayer or poly(methyl methacrylate) film). The wetristor effect, namely the water-induced resistivity collapse, occurs in uncovered devices only. Atomic force microscopy and Raman spectroscopy indicate substantial morphology changes of graphene membranes in such devices, while covered membranes suffer no changes, upon channel water filling. The results suggest an electromechanical nature for the wetristor effect, where the resistivity reduction is caused by unwrinkling of the graphene membrane through channel filling, with an eventual direct doping caused by water being of much smaller magnitude, if any. The wetristor device should find useful sensing applications in general micro- and nanofluidics.

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Raman spectroscopy polarization dependence analysis in two-dimensional gallium sulfide

Citation:

Publicações